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| ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES * VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz * HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz Noise Figure, NF (dB) 1.4 1.2 GA 1 0.8 0.6 0.4 0.2 NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA 24 21 * LG = 0.25 m, WG = 200 m * LOW COST METAL/CERAMIC PACKAGE * TAPE & REEL PACKAGING OPTION AVAILABLE 18 15 NF DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. 12 9 6 3 0 1 10 20 30 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT GA 1 1 NE32484A 84AS UNITS dB dB dBm dBm dB dB mA V mS A C/W C/W 15 -2.0 45 10.0 MIN TYP 0.6 11.0 8.5 11.0 10.0 10.5 40 -0.8 60 0.5 750 350 10.0 70 -0.2 MAX 0.7 PARAMETERS AND CONDITIONS Noise Figure, VDS = 2.0 V, ID = 10 mA, f = 12 GHz Associated Gain, VDS = 2.0 V, ID = 10 mA, f = 12 GHz Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA Gain at P1dB, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA Saturated Drain Current, VDS = 2.0 V, VGS = 0 V Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA Transconductance, VDS = 2.0 V, ID = 10 mA Gate to Source Leakage Current, VGS = -3.0 V, ID = 0 mA Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case) P1dB G1dB IDSS VP gm IGSO RTH (CH-A) RTH (CH-C) Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. California Eastern Laboratories Associated Gain, GA (dB) NE32484A ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGS IDS IGRF TCH TSTG PT PARAMETERS Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Total Power Dissipation UNITS V V mA A C C mW RATINGS 4.0 -3.0 IDSS 200 150 -65 to +150 165 TYPICAL NOISE PARAMETERS (TA = 25C) FREQ. (GHz) NFMIN (dB) GA (dB) OPT MAG ANG Rn/50 VC = 2 V, IDS =10 mA 1.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 0.30 0.31 0.32 0.37 0.43 0.51 0.60 0.72 0.86 1.00 24.91 23.05 20.13 16.23 13.95 12.52 11.41 10.70 10.29 10.22 0.88 0.82 0.71 0.60 0.50 0.40 0.33 0.28 0.28 0.31 13.00 28.00 59.00 82.00 106.00 131.00 159.00 -166.00 -132.00 -104.00 0.33 0.31 0.26 0.20 0.13 0.09 0.06 0.05 0.04 0.04 Note: 1. Operation in excess of anyone of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 200 (TA = 25C) NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz 1.4 14 Total Power Dissipation, PT (mW) 1.2 13 150 Infinite Heat sink 1 NF 0.8 GA 0.6 0.4 12 11 10 9 100 Free Air 50 0.2 8 7 0 5 10 15 20 25 30 35 0 0 25 50 75 100 125 150 175 200 0 Ambient Temperature, TA (C) Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 100 TRANSCONDUCTANCE vs. DRAIN CURRENT Drain Current, IDS (mA) 40 VGS (V) 0 Transconductance, gm (mS) 80 30 -0.1 60 -0.2 20 -0.3 10 -0.4 -0.5 0 0 1.5 3.0 40 20 0 0 5 10 15 20 25 30 35 40 45 50 Drain to Source Voltage, VDS (V) Drain Current, IDS (mA) Associated Gain, GA (dB) Noise Figure, NF (dB) NE32484A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) .8 .6 .4 3 .2 4 5 1 1.5 2 90 135 45 S22 18 GHz S22 0.1 GHz 10 20 10 20 0 .2 .4 .6 .8 1 1.5 2 3 45 S11 18 GHz -.2 -3 -.4 -2 -.6 -.8 -1 -1.5 -20 -10 -5 -4 S11 0.1 GHz 180 S21 0.1 GHz S12 0.1 GHz S21 18 GHz 0.1 0 2.5 S12 18 GHz 315 225 5.0 270 NE32484A VDS = 2 V, IDS = 10 mA FREQUENCY (GHz) 0.1 0.2 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 Note: 1. Gain Calculations: MAG = |S21| |S12| S11 MAG 0.999 0.999 0.992 0.960 0.916 0.870 0.810 0.754 0.702 0.660 0.621 0.584 0.538 0.506 0.484 0.463 0.445 0.420 0.415 0.425 ANG -1.8 -3.8 -18.2 -34.6 -50.5 -65.5 -80.0 -94.4 -107.9 -119.6 -131.2 -142.2 -154.6 -168.2 177.4 165.1 152.3 137.6 121.5 102.2 MAG 4.893 4.889 4.812 4.649 4.453 4.229 4.011 3.780 3.541 3.314 3.141 3.033 2.943 2.831 2.757 2.672 2.611 2.577 2.528 2.517 S21 ANG 178.2 176.2 161.6 145.5 129.8 114.9 100.8 87.0 74.4 62.4 51.1 40.1 28.7 17.3 6.1 -4.5 -16.0 -27.3 -39.3 -51.3 MAG 0.002 0.003 0.018 0.033 0.046 0.059 0.069 0.077 0.082 0.087 0.090 0.096 0.102 0.107 0.112 0.118 0.124 0.133 0.140 0.149 S12 ANG 88.5 87.1 77.3 67.3 58.1 49.2 41.2 33.8 27.3 22.4 17.7 13.9 9.6 4.9 -0.0 -4.3 -9.3 -15.4 -22.7 -30.2 MAG 0.647 0.646 0.641 0.632 0.614 0.590 0.568 0.550 0.531 0.513 0.498 0.485 0.472 0.458 0.447 0.437 0.427 0.418 0.407 0.397 S22 ANG -0.9 -2.4 -12.6 -24.2 -35.1 -45.3 -55.1 -64.3 -73.5 -81.3 -88.4 -94.9 -101.8 -110.0 -119.0 -127.3 -135.9 -145.4 -156.6 -168.9 K 0.071 0.053 0.101 0.213 0.313 0.398 0.502 0.594 0.688 0.774 0.861 0.909 0.964 1.005 1.014 1.027 1.033 1.019 1.002 0.945 MAG1 (dB) 33.885 32.121 24.271 21.488 19.859 18.554 17.644 16.910 16.353 15.808 15.428 14.996 14.602 13.809 13.179 12.551 12.126 12.029 12.288 12.277 (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE32484A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25C) .8 .6 .4 1 1.5 2 90 135 45 .2 S11 18 GHz S22 0.1 GHz 3 4 5 10 20 10 20 0 .2 .4 .6 .8 1 1.5 2 3 45 S22 18 GHz -.2 -3 -.4 -2 -.6 -.8 -1 -1.5 -20 -10 -5 -4 S11 0.1 GHz 180 S21 0.1 GHz S12 0.1 GHz 2.5 0.1 0 S21 18 GHz S12 18 GHz 315 225 5.0 270 NE32484A VDS = 2 V, IDS = 20 mA FREQUENCY (GHz) 0.1 0.2 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG 0.999 0.999 0.986 0.950 0.903 0.848 0.786 0.727 0.676 0.628 0.587 0.551 0.514 0.477 0.456 0.437 0.420 0.392 0.393 0.404 S11 ANG -2.7 -3.9 -18.9 -35.9 -52.1 -67.4 -82.1 -96.4 -110.1 -121.5 -133.1 -143.7 -155.9 -169.9 175.8 163.6 150.6 135.6 119.7 100.5 MAG 5.59 5.57 5.47 5.26 5.01 4.70 4.41 4.12 3.85 3.59 3.37 3.24 3.11 3.00 2.91 2.82 2.75 2.70 2.65 2.63 S21 ANG 177.2 175.6 160.9 144.2 128.3 113.1 98.9 85.1 72.4 60.7 49.4 38.4 27.3 16.2 5.20 -5.30 -16.6 -28.0 -39.7 -51.4 MAG 0.002 0.003 0.016 0.030 0.043 0.054 0.064 0.073 0.079 0.086 0.090 0.099 0.108 0.115 0.121 0.129 0.136 0.147 0.154 0.163 S12 ANG 88.5 87.4 78.6 68.8 60.9 52.9 45.9 39.3 33.4 28.7 24.4 19.7 15.8 9.8 3.7 -1.4 -7.8 -14.2 -22.5 -30.8 MAG 0.560 0.559 0.550 0.538 0.526 0.515 0.503 0.492 0.480 0.468 0.457 0.445 0.434 0.422 0.410 0.399 0.387 0.376 0.364 0.352 S22 ANG -2.8 -4.0 -12.8 -23.8 -34.1 -43.8 -53.1 -62.0 -70.6 -78.0 -84.7 -90.9 -97.4 -105.2 -114.3 -122.4 -131.0 -140.7 -151.8 -163.8 0.055 0.041 0.143 0.274 0.373 0.479 0.578 0.665 0.747 0.825 0.908 0.936 0.958 0.989 0.998 1.000 1.006 0.996 0.979 0.935 K MAG1 (dB) 34.464 32.687 25.339 22.439 20.664 19.397 18.383 17.516 16.878 16.206 15.734 15.149 14.593 14.164 13.811 13.397 12.573 12.640 12.357 12.078 Note: 1. Gain Calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE32484A OUTLINE DIMENSIONS (TA = 25C) NE32484AS PACKAGE OUTLINE 84AS (Units in mm) 1.78 0.2 ORDERING INFORMATION PART NUMBER NE32484AS NE32484A-T1 QTY Bulk up to 1 K 1K/Reel PACKAGE 84AS 84AS Note: Long leaded (1.7 min.) 84A package available upon request in bulk quantities up to 1000 pcs. To order specify NE32484A-SL. S 1.78 0.2 D T S G 0.5 0.1 (ALL LEADS) 1.0 0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM 11/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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